词语吧>英语词典>etching翻译和用法

etching

英 [ˈetʃɪŋ]

美 [ˈetʃɪŋ]

n.  蚀刻画; 蚀刻术; 蚀刻法
v.  蚀刻,凿出(玻璃、金属等上的文字或图画); (脸上)流露出; 铭刻; 画出…的轮廓
etch的现在分词

复数:etchings 现在分词:etching 

GRE化学

BNC.16752 / COCA.14836

牛津词典

    noun

    • 蚀刻画;蚀刻术;蚀刻法
      a picture that is printed from an etched piece of metal; the art of making these pictures

      柯林斯词典

      • 蚀刻版画
        Anetchingis a picture printed from a metal plate that has had a design cut into it with acid.

        英英释义

        noun

        • making engraved or etched plates and printing designs from them
            Synonym:engraving
          1. an etched plate made with the use of acid
            1. an impression made from an etched plate

              双语例句

              • Effect of width ratio on the etching behaviour of joint channel structure is studied.
                对宽度比对组合沟道结构的牺牲层腐蚀特性的影响进行了研究。
              • This technique takes advantage of the large difference in etching properties for different crystallographic planes in alkaline solution.
                这项技术利用了硅的不同晶面在碱性腐蚀溶液中具有不同腐蚀速率的特性。
              • No resolved etching was developed.
                并无可溶性侵蚀发生。
              • Intaglio engraving of rejectamenta acid etching chemicals.
                凹版雕刻用酸性蚀刻化学品废弃物。
              • The Study of Porous InP Formed by Electrochemical Etching;
                对易获得重现性好的化学蚀刻法进行了探研。
              • The designed SOI nanowire AWGs were fabricated using ultraviolet lithography and induced coupler plasma etching.
                通过深紫外光刻和感应耦合等离子刻蚀设备,制备了所设计的器件。
              • UV lithography, silicon etching and soft lithography were adopted to fabricate micropillar arrayed cell culture substrates.
                以紫外光光刻、硅蚀刻及软光刻技术制备了微柱阵列型细胞培养基底。
              • An etching made by this process. There is corrode spot and pitting on the surface of all valve.
                细点腐蚀制板法的过程所有阀门表面上都有腐蚀斑痕和麻点。
              • Stencil manufacturing techniques include chemical etching, laser cutting and electroforming.
                钢网制作技术包括化学腐蚀,激光切割和电铸。
              • Therefore, plasma etching anisotropy can be improved by increasing rf frequency or rf-bias power.
                因此,等离子体刻蚀的各向异性可以通过增加射频频率和射频功率来改善。